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Tungsten Titanium Planar Alloy Sputtering Target
  • Tungsten Titanium Planar Alloy Sputtering TargetTungsten Titanium Planar Alloy Sputtering Target
  • Tungsten Titanium Planar Alloy Sputtering TargetTungsten Titanium Planar Alloy Sputtering Target

Tungsten Titanium Planar Alloy Sputtering Target

Tungsten Titanium Planar Alloy Sputtering Target has low electron mobility, stable thermal mechanical properties, good corrosion resistance and good chemical stability. In recent years, tungsten-titanium alloy sputtering targets have been used as contact layer materials for gate circuits of semiconductor chips. In addition, tungsten titanium alloy sputtering target can also be used as barrier layers in the metal connection of semiconductor devices. It is used in high temperature environment, mainly for vlsi and solar cells.

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Product Description

Tungsten Titanium Planar Alloy Sputtering Target is an alloy with the advantages of transition metal tungsten and titanium. It has high density and purity, good corrosion resistance and small volume expansion effect, and can effectively reduce the formation of particles in the manufacturing process, that is, it can successfully prepare high-quality films.

Preparation process of tungsten-titanium alloy sputtering target: the mixture of high-purity tungsten powder and bowl powder is pressed by cold isostatic pressure to return the material, which is put into a vacuum sintering furnace for densification and sintering. The sintered tungsten bowl material is cooled out of the furnace and then melted in a non-consumption vacuum arc furnace to prepare high-purity and high-density materials.

The commonly used proportion of tungsten-titanium alloy sputtering target is WTi 90/10wt% and WTi 85/15wt%. Specification and purity can be customized


Product Parameter (Specification)

Composition 90wt%W+10wt%Ti
Purity ≥99.95%
Density (g/cm³) >17.3
Electrical resistivity
(Ω.cm)
Theoretical density (g/cm3) 17.869
Metal impurity
(ppm)
Total < 500
Dimension (mm) Square plate: (50-350)L×(50-200)W×(4-20)H
Circular plate: 0(5O-35O)×(4-2O)H


Product Feature And Application

Tungsten Titanium Planar Alloy Sputtering Target is widely used in semiconductors and thin film solar cells. For semiconductor applications, WTi10wt% film is used as a diffusion barrier layer and an adhesive layer to separate the metallized layer from the semiconductor, for example, aluminum from silicon, or copper from silicon. Therefore, the function of semiconductors in microchips can be significantly improved. For yellow film solar cells, WTi10wt% yellow film is also used as an anode barrier to prevent the diffusion of iron atoms in the steel substrate to the back contact and CIGS semiconductors. Tungsten-titanium alloy sputtering target is also used for LED and tool coating.


Product Details

Our Tungsten Titanium Planar Alloy Sputtering Target is clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.


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