Gallium Antimonide Planar Alloy Sputtering Target
For Gallium Antimonide Planar Alloy Sputtering Target, everyone has different special concerns about it, and what we do is to maximize the product requirements of each customer, so the quality of our Gallium Antimonite alloy sputtering target has been well received by many customers and enjoyed a good reputation in many countries. Senxiang (Ningbo) New Material Co., Ltd. Gallium Antimonite alloy sputtering target have characteristic design & practical performance & competitive price, for more information on the Gallium Antimonite alloy sputtering target, please feel free to contact us.
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Product Description
Gallium Antimonide Planar Alloy Sputtering Target Gallium antimonide (GaSb), a kind of antimonide semiconductor, is a semiconductor material formed by the combination of group III element gallium (Ga) and group V element antimony (Sb). It belongs to the narrow band gap semiconductor of group III-V compounds, with a gray white crystal appearance, cubic crystal system and sphalerite structure. Gallium antimonide is a fourth generation semiconductor material and also a third generation infrared technology material. Its working band covers near-infrared to far-infrared, and has great development and application value.Gallium Antimonite (GaSb) is a III-V compound semiconductor, belonging to sphalerite and direct band gap material, with a band gap of 0.725eV (300K) and a lattice constant of 0.60959nm. GaSb has excellent physical and chemical properties and is often used as a substrate material for infrared detectors and lasers ranging from 8 to 14mm and larger. In addition, Te doped GaSb can be used to prepare high photoelectric conversion efficiency thermal photovoltaic devices, stacked solar cells, and microwave devices.
Product Parameter (Specification)
| Composition | GaSb |
| Purity | ≥99.9% |
| Density | customized |
| Maximum size | L≤2000mm,W≤200mm |
| Maximal OD | According to customer |
| Maximal Length | According to customer |
Product Feature And Application
Gallium Antimonide Planar Alloy Sputtering Target has excellent physical and chemical properties and is often used as a substrate material for infrared detectors and lasers ranging from 8 to 14mm and larger. In addition, Te doped GaSb can be used to prepare high photoelectric conversion efficiency thermal photovoltaic devices, stacked solar cells, and microwave devices.
Product Details
Our Gallium Antimonite alloy sputtering target is clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.
